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Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulatorYOUNGHYUN KIM; TAKENAKA, Mitsuru; OSADA, Takenori et al.Thin solid films. 2014, Vol 557, pp 342-345, issn 0040-6090, 4 p.Conference Paper

Phase transition of hydrogenated SiGe thin films in plasma-enhanced chemical vapor depositionSUN JIN YUN; JUN KWAN KIM; SEONG HYUN LEE et al.Thin solid films. 2013, Vol 546, pp 362-366, issn 0040-6090, 5 p.Conference Paper

Influence of the extrinsic base on the base current kink in SiGe BJTsSADOVNIKOV, Alexei; KRAKOWSKI, Tracey; EL-DIWANY, Monir et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 320-323, issn 0169-4332, 4 p.Conference Paper

Epitaxial growth of fully relaxed Si_0.75Ge_0.25 on SOI substrateZHONGYING XUE; XING WEI; BO ZHANG et al.Applied surface science. 2011, Vol 257, Num 11, pp 5021-5024, issn 0169-4332, 4 p.Article

Ge wire MOSFETs fabricated by three-dimensional Ge condensation techniqueIRISAWA, T; NUMATA, T; HIRASHITA, N et al.Thin solid films. 2008, Vol 517, Num 1, pp 167-169, issn 0040-6090, 3 p.Conference Paper

Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growthPENGPAD, P; OSMAN, K; LLOYD, N. S et al.Microelectronic engineering. 2004, Vol 73-74, pp 508-513, issn 0167-9317, 6 p.Conference Paper

Detailed Simulation Study of a Reverse Embedded-SiGe Strained-Silicon MOSFETFIORENZA, James G; PARK, Ji-Soo; LOCHTEFELD, Anthony et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 2, pp 640-648, issn 0018-9383, 9 p.Article

Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixingCHEN, P. S; LEE, S. W; LEE, M. H et al.Applied surface science. 2008, Vol 254, Num 19, pp 6076-6080, issn 0169-4332, 5 p.Conference Paper

A DC-5 GHz nMOSFET SPDT T/R switch in 0.25-μm SiGe BiCMOS technologyCRIPPA, Paolo; ORCIONI, Simone; RICCIARDI, Francesco et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 434-438, issn 0169-4332, 5 p.Conference Paper

Thermal reliability of thin SiGe epilayersWU, Ming-Jhang; WEN, Hua-Chiang; CHIANG, Tun-Yuan et al.Applied surface science. 2012, Vol 258, Num 12, pp 5001-5004, issn 0169-4332, 4 p.Article

Impact of 100 MeV Au on the surface of relaxed Si_0.5Ge_0.5 alloy films studied by atomic force microscopyKANJILAL, A; LUNDSGAARD HANSEN, J; NYLANDSTED LARSEN, A et al.Surface science. 2006, Vol 600, Num 15, pp 3087-3092, issn 0039-6028, 6 p.Article

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractionsHAIGUI YANG; DONG WANG; NAKASHIMA, Hiroshi et al.Thin solid films. 2010, Vol 518, Num 9, pp 2342-2345, issn 0040-6090, 4 p.Conference Paper

Electrical properties of SiGe nanowire following fluorine/nitrogen plasma treatmentCHANG, Kow-Ming; CHEN, Chu-Feng; LAI, Chiung-Hui et al.Applied surface science. 2014, Vol 289, pp 581-585, issn 0169-4332, 5 p.Article

Pt interlayer effects on Ni germanosilicide formation and contact propertiesXU, Yao-Juan; RU, Guo-Ping; JIANG, Yu-Long et al.Applied surface science. 2009, Vol 256, Num 1, pp 305-310, issn 0169-4332, 6 p.Article

Base doping and dopant profile control of SiGe npn and pnp HBTsTILLACK, Bernd; HEINEMANN, Bernd; KNOLL, Dieter et al.Applied surface science. 2008, Vol 254, Num 19, pp 6013-6016, issn 0169-4332, 4 p.Conference Paper

Selective vapor phase etching of SiGe by HCl in a RPCVD reactorYAMAMOTO, Yuji; KÖPKE, Klaus; KURPS, Rainer et al.Applied surface science. 2008, Vol 254, Num 19, pp 6037-6039, issn 0169-4332, 3 p.Conference Paper

Depth scale calibration of SIMS depth profiles by means of an online crater depth measurement techniqueDE CHAMBOST, E; MONSALLUT, P; RASSER, B et al.Applied surface science. 2003, Vol 203-04, pp 391-395, issn 0169-4332, 5 p.Conference Paper

Special issue on silicon germanium - advanced technology, modeling, and designSINGH, Raminderpal; HARAME, David L; MEYERSON, Bernard S et al.Proceedings of the IEEE. 2005, Vol 93, Num 9, issn 0018-9219, 161 p.Serial Issue

Rutherford backscattering research on the strained SiGe/Si structureHU, J. H; FAN, Y. L; GONG, D. W et al.Solid state communications. 1994, Vol 92, Num 12, pp 963-966, issn 0038-1098Article

Single-wafer process technology: Enabling rapid SiGe BiCMOS development : Single-wafer manufacturing in the nanochip eraSCHUEGRAF, Klaus.IEEE transactions on semiconductor manufacturing. 2003, Vol 16, Num 2, pp 121-127, issn 0894-6507, 7 p.Article

On the potential of SiGe HBTs for extreme environment electronicsCRESSLER, John D.Proceedings of the IEEE. 2005, Vol 93, Num 9, pp 1559-1582, issn 0018-9219, 24 p.Article

Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated X-ray intensitiesOMPRAKASH, M; ARIVANANDHAN, M; OZAWA, T et al.Journal of alloys and compounds. 2014, Vol 590, pp 96-101, issn 0925-8388, 6 p.Article

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel widthLEE, Chang-Chun; LIU, Chuan-Hsi; HSU, Hung-Wen et al.Thin solid films. 2014, Vol 557, pp 311-315, issn 0040-6090, 5 p.Conference Paper

Performances of amorphous silicon and silicon germanium semi-transparent solar cellsJUNG WOOK LIM; SEONG HYUN LEE; DA JUNG LEE et al.Thin solid films. 2013, Vol 547, pp 212-215, issn 0040-6090, 4 p.Conference Paper